【摘 要】
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Thermoelectric devices enable direct conversion between thermal and electrical energy.Recent studies have indicated that the thin film/substrate heterostructure is effective in achieving high thermoelectric performance via decoupling the Seebeck coefficie
【机 构】
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State Key Laboratory of Catalysis,CAS Center for Excellence in Nanoscience,Dalian Institute of Chemi
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Thermoelectric devices enable direct conversion between thermal and electrical energy.Recent studies have indicated that the thin film/substrate heterostructure is effective in achieving high thermoelectric performance via decoupling the Seebeck coefficient and electrical conductivity otherwise adversely inter-dependent in homogenous bulk materials.However,the mechanism underlying the thin film/sub-strate heterostructure thermoelectricity remains unclear.In addition,the power output of the thin film/-substrate heterostructure is limited to the nanowatt scale to date,falling short of the practical application requirement.Here,we fabricated the CrN/SrTiO3-x heterostructures with high thermoelectric output power and outstanding thermal stability.By varying the CrN film thickness and the reduction degree of SrTiO3-x substrate,the optimized power output and the power density have respectively reached 276 μW and 108 mW/cm2 for the 30 nm CrN film on a highly reduced surface of SrTiO3-x under a tem-perature difference of 300 K.The performance enhancement is attributed to the CrN/SrTiO3-x heteroin-terface,corroborated by the band bending as revealed by the scanning Kelvin probe microscopy.These results will stimulate further research efforts towards interface thermoelectrics.
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