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用化学气相淀积(CVD)法,在6H-SiC衬底上同质外延生长SiC层,继而外延生长了Si1-yCy合金薄膜,用XRD、扫描电子显微镜、电化学腐蚀测电容-电压(ECV)方法,以及俄歇电子能谱(AES)等方法对所得的样品进行了表征测量。XRD衍射谱表明合金薄膜晶体取向单一;SEM结果显示Si1-yCy合金薄膜表面平整,晶粒大小均匀。利用ECV方法得到样品中的载流子浓度分布,由衬底至表面呈n型导电。外延层中(表面除外)的载流子浓度分布是与C的深度分布相关的,表面部分的载流子浓度分布则与背景非故意掺杂相关。
The SiC layer was homoepitaxially grown on the 6H-SiC substrate by chemical vapor deposition (CVD) method, followed by epitaxial growth of the Si1-yCy alloy thin film. The XRD, SEM and electrochemical etching of the capacitance- ) Method, and Auger electron spectroscopy (AES) were used to characterize the obtained samples. The results of XRD showed that the crystal orientation of the alloy thin films was single. The SEM results showed that the surface of the Si1-yCy alloy films was smooth and the grain size was uniform. The ECV method was used to obtain the carrier concentration distribution in the sample, which was n-typed from the substrate to the surface. The carrier concentration distribution in the epitaxial layer (except for the surface) is related to the depth distribution of C, and the carrier concentration distribution in the surface portion is related to the background unintentional doping.