论文部分内容阅读
We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric.The maximum effective channel mobility is 1862cm2/V.s extracted by the split C-V method.Devices with 0.8 μm gate length exhibit a peak extrinsic transconductance of 85 mS/mm and a drive current of more than 200 mA/mm.A shortcircuit current gain cutoff frequency fT of 24.5 GHz and a maximum oscillation frequency fmax of 54 GHz are achieved for the 0.8μm gate-length device.The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications.