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制作了1μm沟道长度 LDD nMOSFET,其衬底电流较常规结构的 MOSFET降低了两个数量级,击穿电压提高了5伏.此外,还建立了包括热电子速度饱和和串联电阻在内的LDDMOSFET解析模型.
A 1μm channel length LDD nMOSFET was fabricated with a substrate current reduction of two orders of magnitude over the conventional MOSFET and an increase of 5 V breakdown voltage. In addition, LDDMOSFETs including thermionic speed saturation and series resistance were also developed model.