论文部分内容阅读
在极大规模集成电路Cu布线的化学机械平坦化过程中,抛光后表面薄膜厚度的一致性是检验平坦化能力的重要参数。从抛光过程中晶圆所受背压方面着手,研究了在不同背压参数情况下抛光后表面薄膜的一致性,得出了在工作压力为103 mdaN/cm2(1 kPa=10 mdaN/cm2)时,最佳的背压参数为108 mdaN/cm2。采用此工艺参数进行抛光后得到的晶圆表面薄膜非均匀性为5.04%,即一致性可以达到94.96%,而且此时表面粗糙度为0.209 nm,从而得到了良好的抛光效果,为极大规模集成电路Cu布线化学机械平坦化的进一步发展提供了新的途径。
In chemical mechanical planarization of very large-scale integrated circuit Cu wiring, the consistency of the film thickness after polishing is an important parameter for checking the planarization ability. Starting from the back pressure of the wafer during the polishing process, the consistency of the surface film after polishing under different backpressure parameters was studied. It was found that under the working pressure of 103 mdaN / cm2 (1 kPa = 10 mdaN / cm2) , The best backpressure parameter is 108 mdaN / cm2. The non-uniformity of the surface of the wafer after polishing with this process parameter is 5.04%, that is, the consistency can reach 94.96%, and the surface roughness is 0.209 nm at this time, so as to obtain a good polishing effect, The further development of the integrated circuit Cu wiring chemical mechanical planarization provides a new way.