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以单分散性聚甲基丙烯酸甲酯(PMMA)微球自组装形成的有序胶体晶体结构为模板,制备了铟锡氧化物(ITO)有序大孔材料.以扫描电子显微镜(SEM)、透射电子显微镜(TEM)以及低温N2吸附/脱附等方法对ITO大孔材料的形态及其比表面积进行了表征.结果表明,烧结温度在500℃时,能够得到较为完善的三维ITO大孔材料,空间排布高度有序,其有序结构与模板中PMMA微球自组装方式完全相同.孔径大小均匀(~450nm),较之PMMA微球有所收缩,BET比表面积为389m2·g-1,孔容为0.36cm3·g-1.此外,发现Sn掺杂率物质的量比为5%时,在真空中退火,ITO大孔材料的导电性能最好,电阻率为8.2×10-3Ω·cm,初步讨论了ITO大孔材料的导电机制,认为氧缺位是获得较好电性能的主要原因.
The ordered colloidal crystal structure formed by self-assembly of monodisperse PMMA microspheres was used as a template to prepare indium tin oxide (ITO) ordered macroporous materials.Using scanning electron microscopy (SEM) Transmission electron microscopy (TEM) and low temperature N2 adsorption / desorption methods were used to characterize the morphology and specific surface area of ITO macroporous materials. The results show that when the sintering temperature is 500 ℃, the three-dimensional ITO macroporous materials , The arrangement of the space is highly ordered, and the ordered structure is identical with the self-assembly of PMMA microspheres in the template.The pore size is uniform (~ 450nm), the BET specific surface area is 389m 2 · g -1 , Pore volume 0.36cm3 · g-1.In addition, it was found that when the amount ratio of Sn-doped material is 5%, annealing in vacuum, the conductivity of ITO macroporous material is the best, the resistivity is 8.2 × 10-3Ω · Cm. The conductive mechanism of ITO macroporous materials was discussed preliminarily. It is considered that oxygen vacancy is the main reason for obtaining better electrical properties.