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台面结构SiGe/Si异质结晶体管制作过程中,发射区台面形成尤为关键。由于干法刻蚀速率难以精确控制,且易损伤SiGe外基区表面,SiGe自中止湿法腐蚀成为台面结构SiGe/Si异质结晶体管制作过程中的优选工艺。分析了SiGe自中止腐蚀的反应机理,对腐蚀条件包括掩蔽膜的选取,温度、超声等因素对腐蚀速率及均匀性的影响进行摸索,取得了较好结果,最终采用该技术完成了SiGe/Si npn型异质结晶体管的制作,测得其电流增益β>80,对采用台面结构制造SiGe/Si HBT具有一定参考价值。
Mesa structure SiGe / Si heterojunction transistor manufacturing process, the launch area mesa is particularly crucial. Since the dry etching rate is difficult to control accurately and the surface of the SiGe outer base region is easily damaged, the wet etch of SiGe becomes a preferred process in the fabrication of mesa-SiGe / Si heterojunction transistors. The reaction mechanism of SiGe self-stopping corrosion was analyzed, and the influence of etching conditions including the selection of masking film, temperature and ultrasonic on the corrosion rate and uniformity was explored, and the better results were obtained. Finally, SiGe / Si npn-type heterojunction transistor production, measured the current gain β> 80, the use of mesa structure manufacturing SiGe / Si HBT has some reference value.