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扼要介绍了影响欧姆接触形成的因素,对金属—半导体结构进行了测量,对Ⅲ—Ⅴ族化合物的欧姆接触进行了评述。我们讨论了用各种工艺形成的金属—半导体系的热性能(合金、烧结,采用了激光和电子束)。同时还评述了金属淀积前对半导体表面的重掺杂工艺(扩散、离子注入、外延)。一般来讲,金属—ⅢⅤ族半导体之间的相互作用将形成化合物。从电学观点来看,虽然化合物的出现改变了界面的化学组成,但似乎并不因此而使势垒高度有大的改变。微粒的淀积会使界面粗糙。我们认为,迄今所有制作接触的工艺均简便可行,但是和理想情况相比还相差很远。
The factors affecting the formation of ohmic contact are briefly introduced. The structure of the metal-semiconductor is measured and the ohmic contact of the group III-V compound is reviewed. We discussed the thermal properties of metal-semiconductor systems formed with various processes (alloys, sintered, using lasers and electron beams). At the same time, the heavy doping process (diffusion, ion implantation, epitaxy) on the semiconductor surface before metal deposition is also reviewed. In general, the interactions between metal-III-V semiconductors will form compounds. From the electrical point of view, although the presence of the compound changes the chemical composition of the interface, it seems that there is not a large change in the height of the barrier. The deposition of particles can make the interface rough. In our opinion, so far the process of making contacts is simple and feasible, but far from ideal.