论文部分内容阅读
通过电特性测量,背散射分析和电子显微镜观察对快速热退火制备的样品,在450-850℃后退火过程中As在Si中的行为进行了系统的研究.结果表明,方块电阻的变化在750℃附近有极大值,低温区随温度而上升,高温区随温度而下降.样品的退道产额和方块电阻的改变单调相关.750℃附近可能存在一个临界区域,将退火过程归属于两类不同的机制.低温区域,硅砷化合物的形成和沉积占优势;高温区域,As原子空位复合的集团的形成占优势.在750℃/5小时的后退火过程中,大约有1/3As原子处于填隙位置,这种大量As原子析出的过程导致了Si晶格的收缩.大量的直径为500—700A 的位销环的形成是这种收缩的一种表现.至于As原子的析出如何导致Si晶格的收缩,其机制尚不清楚.但是Si原子在后退火过程中对晶格发生移位这一实验事实,动摇了质量作用定律作为集团模型的物理基础.
The behavior of As in Si during annealing at 450-850 ℃ was systematically investigated by electrical property measurement, backscatter analysis and electron microscope observation.The results show that the change of sheet resistance is about 750 ℃, the temperature in the low temperature region increases and the temperature in the high temperature region decreases with the decrease of the temperature.The yield of the sample is monotonously correlated with the change of the square resistance.A critical region near 750 ℃ may exist, and the annealing process belongs to two In the low temperature region, the formation and deposition of silicon-arsenic compounds predominate; in the high-temperature region, the formation of vacancies of As atoms vacancies predominates.After annealing at 750 ℃ for 5 hours, about 1 / 3As atoms At interstitial sites, this large As atom precipitation process results in the shrinkage of the Si lattice.The formation of a large number of pin rings with a diameter of 500-700 A is a manifestation of this contraction. As for the precipitation of As atoms, The mechanism of the shrinkage of Si lattice is not clear, but the fact that Si atoms shift the lattice in the post-annealing process shakes the law of mass as the physical basis of the group model.