据报道,美帝国际商业机器公司在制造金掺杂双极晶体管时,由于采用了砷代替过去使用的磷作为扩散杂质,使该器件的截止频率和成品率都有所提高。过去,使用磷作为扩散杂质是为了缩短少数载流子寿命,使双极晶体管的速度得到提高。但是,在制造工艺中,发射极和基极的厚度的控制是非常困难的。 It is reported that when the US imperial International Business Machines Corporation manufacturing gold-doped bipolar transistors, due to the use of arsenic instead of the past use of phosphorus as a diffusion impurity, the device cut-off frequency and yield have increased. In the past, the use of phosphorus as a diffusion impurity was intended to shorten minority carrier lifetime and increase the speed of bipolar transistors. However, the control of the thickness of the emitter and base is very difficult in the manufacturing process.