用分子束外延技术试制成两种和以往的汽相外延法具有同样特性的砷化镓场效应晶体管(GaAsFET)。一种是频率为8千兆赫的最小噪声系数为2.5分贝的器件,另一种是8千兆赫下最大饱和输出功率为2瓦的器件。前者是三菱电机公司研制的,后者是富士通研究所研制的。各自独立地在分子束外延技术器件的应用方面进行了探讨。 Using molecular beam epitaxy, two GaAs FETs with the same characteristics as the conventional vapor phase epitaxy have been fabricated. One is a device with a minimum noise figure of 2.5 dB at a frequency of 8 GHz and a device with a maximum saturation output of 2 watts at 8 GHz. The former is developed by Mitsubishi Electric Corporation, the latter developed by Fujitsu Institute. Independently in the application of molecular beam epitaxy technology devices were discussed.