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设计了一种新型半导体集成光源ＡｌＧａＡｓ短波长超辐射集成光源。器件为单量子阱、增益导引的氧化物条形结构，采用直接耦合方式将超辐射发光管与光放大器集成在一起，在脉冲条件下获得了输出功率为５７ｍＷ的超辐射，谱线宽度（ＦＷＨＭ）为２０ｎｍ，放大器的增益为２１ｄＢ。
A new type of semiconductor integrated light source AlGaAs short wavelength super-radiation integrated light source is designed. The device is a single-quantum-well, gain-guided oxide stripe structure. The direct coupling method is used to integrate the superluminescent LED with the optical amplifier. Under the pulse condition, the output power is 57mW and the spectral width FWHM) is 20 nm and the gain of the amplifier is 21 dB.