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以单晶硅和聚酰亚胺为衬底,用磁控溅射沉积调制周期λ=25~150 nm、调制比η=0.5~2的Cu/W纳米多层膜,用XRD、SEM、EDS、AFM、微力测试系统、纳米压痕仪和四探针法对多层膜微观结构、表面形貌和力学及电学性能进行研究。结果表明:λ和η显著影响多层膜结构和性能。多层膜Cu层和W层均为纳米晶结构,分别呈Cu(111)和W(110)择优取向。W(110)晶面间距减小且减幅与1/λ或η值呈正相关,Cu/W层间界面处存在扩散混合层。表面Cu层晶粒尺寸随Cu层厚增加而增大。裂纹萌生临界应变εc总体上随λ增大或η减小而下降,屈服强度σ0.2、显微硬度H和电阻率ρ总体上均与λ或η呈负相关。因Cu层和W层厚度随λ或η的变化而改变,相应地改变了Cu层晶粒度及其晶界密度、W层体积分数和Cu/W层间界面数量,使位错运动能力及电子散射效应变化,最终改变Cu/W纳米多层膜性能。
The Cu / W nano-multilayer with modulation period λ = 25 ~ 150 nm and modulation ratio η = 0.5 ~ 2 was deposited by magnetron sputtering using single crystal silicon and polyimide as substrate. , AFM, micro-force testing system, nano-indenter and four-probe method to study the microstructure, surface morphology and mechanical and electrical properties of multilayer films. The results show that: λ and η significantly affect the multilayer structure and properties. The multilayers Cu and W have nanocrystalline structure with Cu (111) and W (110) preferred orientations respectively. The W (110) interplanar spacing decreases and the decrease amplitude has a positive correlation with 1 / λ or η value. There exists a diffusion mixing layer at the interface between Cu / W layers. The surface Cu layer grain size increases with increasing Cu layer thickness. The critical strain εc of crack initiation generally decreases with increasing λ or decreasing η. The yield strength σ0.2, microhardness H and resistivity ρ are negatively correlated with λ or η as a whole. Due to the change of the thickness of Cu and W layers with the change of λ or η, the grain size of the Cu layer and its grain boundary density, the volume fraction of the W layer and the interfacial number of the Cu / W layer are changed correspondingly, and the dislocation kinetic and The electron scattering effect changes, eventually changing Cu / W nano-multilayer film performance.