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测量了 n 型砷化镓耗尽层电容与其在电化学池中阳极电势的函数关系。己经表明,倘若维持表面积一定的话,这种测量可以导出载流子浓度的精确值而与电化学溶解剥蚀无关。描述了为了保持电解液和半导体接触面积恒定所需的实验条件。也指出了扩展到这一特定区域外侧会引起电容量的明显增大(通过实际面积的增加)。在这种条件下,不能再用于得到载流子浓度但是可以弄清关于材料内部结构的许多问题。
The capacitance of n-type gallium arsenide depletion layer as a function of its anode potential in an electrochemical cell was measured. It has been shown that this measurement can derive the exact carrier concentration regardless of the electrochemical dissolution of the substrate if the surface area is maintained at a constant level. Described in order to maintain the electrolyte and semiconductor contact area constant required experimental conditions. It is also pointed out that expanding to the outside of this particular area causes a significant increase in capacitance (by increasing the actual area). Under these conditions, it can no longer be used to obtain the carrier concentration but many problems with the internal structure of the material can be clarified.