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根据热力学第二定律的Gibbs自由能描述,理论研究了铝诱导晶化(AIC)制备多晶硅薄膜的铝诱导层交换(ALILE)机理。用数学模型描述了ALILE过程中a-Si原子通过Al2O3缓冲层向铝层扩散的动力学过程。在此模型框架下,根据多晶硅薄膜制备过程中退火温度和Al2O3缓冲层的制备条件,对成核之前铝层中硅原子的浓度随时间的变化和成核时间变化的关系进行深入的理论研究,试验验证了理论计算结果;通过透射电子显微镜测量了不同退火温度下的非晶硅微孔深度,根据理论研究计算得到了非晶硅溶解到铝膜中的激活能E A为0.57 eV。
According to the Gibbs free energy description of the second law of thermodynamics, the mechanism of aluminum induced layer exchange (ALILE) of polycrystalline silicon thin films fabricated by aluminum induced crystallization (AIC) has been theoretically studied. A mathematical model was used to describe the kinetics of a-Si atoms diffusing into the aluminum layer through the Al 2 O 3 buffer layer during the ALILE process. Under the framework of this model, according to the annealing temperature and the preparation conditions of Al2O3 buffer layer in the process of preparing polycrystalline silicon thin films, the relationship between the concentration of silicon atoms in the aluminum layer before the nucleation and the change of the nucleation time is deeply studied. The results of theoretical calculations are validated by experiments. The depths of amorphous silicon micropores at different annealing temperatures are measured by transmission electron microscopy. The activation energy EA of amorphous silicon dissolved in the aluminum film is 0.57 eV calculated theoretically.