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借助高分辨电子显微像结合解卷处理的方法研究了GaN晶体中的堆垛层错.简要介绍了高分辨电子显微像的解卷处理原理,指出通过解卷处理可以把本来不直接反映待测晶体结构的高分辨电子显微像转换为直接反映晶体结构的图像.用高分辨电子显微像观察了GaN晶体中的堆垛层错,对高分辨电子显微像作了解卷处理.在解卷像上清晰可见缺陷核心的原子排列情况,据此确定了层错的类型.此外,还讨论了解卷处理在研究晶体缺陷中的效用.
The stacking faults in GaN crystals were studied by means of high-resolution electron microscopy combined with unwinding processing.The principle of unwinding processing for high-resolution electron microscopy was briefly introduced, and it was pointed out that unwinding processing that could not otherwise be directly reflected The high-resolution electron micrographs of the crystal structure to be measured are converted into images that directly reflect the crystal structure. The stacking faults in the GaN crystal are observed by high-resolution electron microscopy and the high resolution electron micrographs are uncoiled. The atomic arrangement of the defect core is clearly shown on the unwrapping image, and the type of stacking fault is determined. In addition, the effect of unwinding processing on the study of crystal defects is also discussed.