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为了准确描述毫米波Ga N高电子迁移率晶体管(HEMT)短栅长器件的热电效应,在Silvaco TCAD软件中建立了毫米波AlGaN/GaN HEMT能量平衡物理模型。该模型不仅考虑表面态和陷阱效应的作用,还引入了热电效应对器件性能的影响。直流及小信号测量数据表明,能量平衡热电物理模型能准确模拟毫米波AlGaN/GaN HEMT器件的直流和小信号输出特性。基于该物理模型,进一步研究了栅源和栅漏间距对毫米波AlGaN/GaN HEMT饱和沟道电流、沟道峰值温度以及截止频率的影响,取得的研究数据可用于指导毫米波AlGaN/GaN HEMT新器件开发及电路设计。
In order to accurately describe the thermoelectric effect of a millimeter-wave GaN high electron mobility transistor (HEMT) short gate length device, a physical model of millimeter wave AlGaN / GaN HEMT energy balance has been established in the Silvaco TCAD software. The model not only considers the effects of surface states and trap effects, but also introduces the effect of the thermoelectric effect on device performance. DC and small signal measurement data show that the energy balance thermoelectric physical model can accurately simulate the millimeter-wave AlGaN / GaN HEMT devices DC and small signal output characteristics. Based on this physical model, the effects of gate-source and gate-drain spacing on the saturation channel current, channel peak temperature and cut-off frequency of the millimeter-wave AlGaN / GaN HEMT are further studied. The obtained data can be used to guide the new mmWave AlGaN / GaN HEMT Device Development and Circuit Design.