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采用流化床的方法,生产出了氯硅烷(三氯氢硅和四氯化硅的混合物)。氯硅烷是制备多晶硅的重要原料,其中合成氯硅烷中B、P杂质含量是影响多晶硅质量的重要因素,严重影响多晶硅的质量指标。通过采用icp-ms对合成物料中B、P杂质含量的测试。结果表明,当合成氯硅烷通过吸附装置后,B、P杂质含量能得到大范围的下降,并且在通过吸附柱的氯硅烷流量在1.2m3/h、压力为0.35MPa时B、P杂质含量趋于稳定。
Using a fluidized bed process, chlorosilane (a mixture of trichlorosilane and silicon tetrachloride) was produced. Chlorosilane is an important raw material for the preparation of polysilicon. Among them, the content of B and P impurities in the synthesis of chlorosilane is an important factor affecting the quality of polysilicon, which seriously affects the quality index of polysilicon. By using icp-ms synthetic materials B, P impurity content of the test. The results show that when the synthesis of chlorosilane through the adsorption unit, B, P impurity content can be a wide range of decline, and through the adsorption column of chlorosilane flow 1.2m3 / h, pressure of 0.35MPa when B, P impurity content tends to Stable.