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A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1 × 15 μm2. The breakdown voltage is more than 7V, the maximum collector current could be more than 100mA. The current gain cutoff frequency is as high as 155 GHz and the maximum oscillation frequency reaches 253 GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2 W/mm.