论文部分内容阅读
Power TW FET(travelling wave field effect transistor)models are built and tested according toa previously derived travelling wave interaction theory.The common drain and gate electrode systemconsisting of coplanar meander slow wave structures are employed.The active length of the deviceis about 3 guided wave length long.With 21 single FETs connecting between the common drainand the gate line,the output power of the model has increased by more than one order in magnitudeas compared to a single FET.A bandwidth of 1:15 and low phase distortion characteristic areobtained.The electric field distribution along the common drain line is then measured and it revealsthat a linear combination of a linear increasing travelling wave and a standing wave exists.The ex-perimental results agree well with the theory.The S parameters of the model show useful results.
Power TW FET (traveling wave field field effect transistor) models are built and tested according to previously derived traveling wave interaction theory. Common drain and gate electrode systemconsisting of coplanar meander slow wave structures are employed. Active length of the deviceis about 3 guided wave length long. With 21 single FETs connecting between the common drain and the gate line, the output power of the model has increased by more than one order in magnitude compared to a single FET. A bandwidth of 1:15 and low phase distortion characteristic areobtained. The electric field distribution along the common drain line is then measured and it reveals a linear combination of a linear increasing traveling wave and a standing wave exists. Ex-perimental results agree well with the theory. The S parameters of the model show useful results .