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本报告提出了微波振荡二极管的新的散热体形成法——选择电镀热沉法。这种方法仅仅在半导体衬底上所需要的地方进行选择电镀,从而形成散热体。选择电镀热沉法与在整个表面电镀的电镀热沉法相比具有如下的特点:在制作工序中的热处理不会发生因半导体衬底与电镀金属的热膨胀差而引起衬底破损;既使内应力大的电镀金属也能用作散热体;不需要从前那样分割散热体的分离工序。本报告叙述了有关电镀金属的基础实验,同时还列举了把选择电镀热沉法应用于锗雪崩二极管的例子。
This report presents a new method of forming a heat sink for a microwave oscillating diode - a selective plating heat sink method. This method performs selective plating only where it is needed on the semiconductor substrate to form a heat sink. The selective plating heat-sink method has the following characteristics compared with the plating heat-sinking method of plating over the entire surface: the substrate is not damaged by the thermal expansion difference between the semiconductor substrate and the plated metal during the heat treatment in the manufacturing process; Large plated metal can also be used as the heat sink; there is no need to separate the heat sink as before. This report describes the basic experiments on electroplating metals and also shows an example of applying selective electroplating to germanium avalanche diodes.