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首次应用一种新的物理构想和工作机制设计了新型的ＧａＡｓ／ＧａＡｌＡｓ红外探测器，并进行了理论计算、器件研制和测试分析。结果表明，这种新型探测器与常规ＧａＡｓ／ＧａＡｌＡｓ量子阱红外探测器相比，具有一些新的特点。理论计算和实验结果得到了很好的一致性。给出了这种新型器件电流输运的计算方法；得到较低的暗电流，较宽的光吸收谱（５～１０μｍ）；得到了新型器件的红外辐射下的光电流响应；初步给出了新型器件工作点的选取方法；模拟计算表明，增加周期个数，将会得到更大的光电流响应。
For the first time, a new kind of GaAs / GaAlAs infrared detector was designed by applying a new physical conception and working mechanism. Theoretical calculation, device development and test analysis were carried out. The results show that the new detector has some new features compared with the conventional GaAs / GaAlAs quantum well infrared detector. Theoretical calculations and experimental results have been very good agreement. The calculation of the current transport of the new device is given. The dark current and the light absorption spectrum (5 ~ 10μm) are obtained. The photocurrent response of the new device under infrared radiation is obtained. New device operating point selection method; simulation shows that increasing the number of cycles, will get greater photocurrent response.