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CMOS集成电路在LSI、VLSI中占有显著地位,它是当今乃至今后一段时期集成电路发展的主流。研究CMOSIC沟道、P~-阱注入杂质的分布和再分布规律,对于指导工艺实践和提高电路性能具有现实意义。
CMOS integrated circuits in LSI, VLSI occupies a prominent position, it is now and even some time in the future the mainstream of the development of integrated circuits. Studying the distribution and redistribution rules of CMOSIC channel and P ~ - well implanted impurities has practical significance for guiding the process practice and improving the circuit performance.