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针对目前采用非球面快慢轴准直镜准直的大功率半导体激光阵列的远场光束特性在理论上缺乏准确的描述,而常用的单一能量利用率光束发散角不能够准确地描述半导体激光器准直光束的特性,难以有效指导其后整形、聚焦等光学系统设计的问题,文章利用CCD成像结合图像处理手段对半导体激光阵列光束经过非球面快慢轴准直镜后的远场光束进行实验研究。实验结果表明,随着能量利用率选择不同快、慢轴远场发散角变化趋势有较大区别,在较高能量利用率条件下,快轴方向能量利用率的微小增加可导致光束质量的迅速劣化,对光学系统要求苛刻;而慢轴方向能量分布较为均匀,光学系统冗余量较大。
The far-field beam characteristics of the high-power semiconductor laser arrays collimated by the aspherical surface fast-axis collimation lens are theoretically lacking in accurate description. However, the commonly used single-beam energy beam divergence angle can not accurately describe the semiconductor laser collimation The characteristics of the beam are difficult to effectively guide the design of the optical system such as shaping and focusing. The article studies the far-field beam after the semiconductor laser array beam passes through the aspherical surface fast axis collimation lens by CCD imaging and image processing. The experimental results show that the divergence angles of the far-field of the slow axis are greatly different with the different selection of energy utilization rate. Under the conditions of higher energy utilization, the small increase of the energy utilization in the fast axis can lead to the rapid improvement of the beam quality Degradation, the optical system demanding; and slow axis energy distribution is more uniform, larger optical system redundancy.