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在GaAs气相生长时,有的情况下能够在衬底与生长层的界面处形成高阻层,这是制备GaAs的器件中的问题所在。自从沃耳夫报导采用气相腐蚀可有效地除去这种高阻层以来,在生长开始前,一般都进行气相腐蚀。可是关于GaAs的气相腐蚀,在生长机构的分析方面有许多的报导,而从表面处理角度写出的报告却很少。作为外延生长前的处理,气相腐蚀的必要条件是:(1)腐蚀后能够保持镜面状态,(2)腐蚀-生长变换必须连续地并迅速地进行。前者作为外延生长前的处理是当然的。因为生长中
In the vapor phase growth of GaAs, a high-resistance layer can be formed at the interface between the substrate and the growth layer in some cases, which is a problem in the device for preparing GaAs. Since the Vohv reported that the use of vapor phase etching can effectively remove this high resistance layer, before the start of growth, the general gas phase corrosion. However, there are many reports on the growth mechanism analysis of the gas phase corrosion of GaAs, but there are only a few reports from the surface treatment point of view. As a pre-epitaxial growth process, the necessary conditions for the gas phase corrosion are: (1) the mirror surface can be maintained after etching, and (2) the corrosion-growth transformation must be performed continuously and rapidly. The former as a pre-growth treatment is of course. Because of growing