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将经过多级提纯、垂直无籽晶气相输运法生长的CdSe晶锭切割,获得沿生长轴向分布的1.3mm厚晶片系列,采用日本SH IMAZU公司的IRpresting-21傅立叶变换红外光谱仪、ZC36型高阻仪及X射线能谱仪对该晶片组的红外透过率、电阻率、成份百分含量进行了测试,依据晶片对红外光的吸收机理,讨论了CdSe晶片在中红外区域透过率的理论值和影响其红外透过率的主要因素,研究了红外透过率与晶片性能的内在联系,为探测器级CdSe晶片的筛选提供了一种简便有效的方法。
The multi-level purification, vertical seedless gas transport growth of CdSe ingot cutting to obtain along the growth of the axial distribution of 1.3mm thick wafer series, Japan’s SH IMAZU company IRpresting-21 Fourier transform infrared spectrometer, ZC36 type The resistivity and composition percentage of the chip group were tested by high-resistance meter and X-ray energy dispersive spectrometer. According to the absorption mechanism of the infrared light, the transmittance of the CdSe chip in the mid-infrared region The theoretical value and the main factors affecting its infrared transmittance were studied. The intrinsic relationship between the infrared transmittance and the properties of the wafers was studied, which provided a simple and effective method for the screening of detector-grade CdSe wafers.