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采用直流磁控溅射法在Pt/Ti/SiO2基片上分别以三种不同的基板温度和后热处理工艺制备了二氧化锡(SnO2)薄膜。采用X射线衍射仪对三种薄膜的晶格结构进行了分析表征,通过Keithley 4200半导体参数分析仪对薄膜的阻变特性进行了测试。实验结果表明:三种制备条件下的SnO2薄膜均具有阻变性能,基板温度350℃和850℃退火处理分别制备的薄膜同时具有良好的写入/擦除电压分布一致性、较好的高阻态阻值离散性和较大的开关比。初步讨论了三种薄膜阻变特性的机理,薄膜内部导电细丝的形成和断裂程度不同造成三种薄膜高低阻态电阻分布不同,同时影响了写入与擦除阈值电压的分布一致性等阻变参数。
Tin oxide (SnO2) thin films were prepared on the Pt / Ti / SiO2 substrates by DC magnetron sputtering at three different substrate temperatures and after-heat treatments. The lattice structures of the three films were characterized by X-ray diffractometer. The resistivity of films was tested by Keithley 4200 semiconductor parameter analyzer. The experimental results show that the SnO2 thin films have resistance to change under the three conditions. The thin films prepared at annealing temperature of 350 ℃ and 850 ℃ have good write / erase voltage distribution uniformity and high resistance Discrete state resistance and a larger switching ratio. The mechanism of the three films’ resistive properties was discussed. The formation and the fracture of the conductive filaments in the film caused the different distributions of the resistive and resistive resistances of the three films. At the same time, the uniformity of the distribution of write and erase threshold voltage Variable parameters.