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用聚酰亚胺（ＰＩ）垫高ＰＶＤＦ－ＭＯＳＦＥＴ超声传感器的扩展栅电极，当ＰＩ厚度大于５μｍ时，扩展栅电容减少到原来的１／６以下，传感器的灵敏度可提高１１．３ｄＢ。讨论了ＰＩ工艺膜的制备和亚胺化温度对ＰＩ膜厚和介电系数的影响。
With polyimide (PI) padded PVDF-MOSFET ultrasonic sensor extended gate electrode, when the PI thickness is greater than 5μm, the extended gate capacitance is reduced to less than 1/6, the sensitivity of the sensor can be increased by 11.3dB. The effects of PI process film preparation and imidization temperature on PI film thickness and dielectric constant were discussed.