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通过对渗碳陶瓷低温温度传感器在0—16T磁场环境、2—320K温区的磁致电阻效应研究,以及与Cernox磁效应的对比分析,得到以下实验结果:在2—10K,渗碳陶瓷磁效应变化比较明显,随温度的降低而升高,随场强近似正系数线性变化,且温度越低,变化率越大;在2—10K,渗碳陶瓷由磁阻引起的误差为负误差,且场强越高,误差越大,误差随温度出现了近似V字形的变化,在7K处误差到达了最高值,16T、7K处的误差为-0.877K;在2—14K,渗碳陶瓷磁效应明显比CX-1050大,在50—300K渗碳陶瓷磁效应比CX-1050小。
Through the research on the magnetoresistance effect of the carburized ceramic cryogenic temperature sensor in 0-16T magnetic field and 2-320K temperature region and the comparison with the Cernox magnetic effect, the following experimental results are obtained: At 2-10K, the carburizing magnetic The effect changes more obvious, with the temperature decreases and increases, with the field strength approximation linear coefficient of change, and the lower the temperature, the greater the rate of change; at 2-10K, carburized ceramic magnetoresistive error is a negative error, And the higher the field strength, the greater the error, the error with the temperature of the approximate V-shaped changes in error at 7K to reach the highest value, 16T, 7K at the error of -0.877K; at 2-14K, carburizing magnetic The effect is obviously larger than that of the CX-1050, and the magnetic effect of the carburized ceramic at 50-300K is smaller than that of the CX-1050.