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利用偏振光椭圆率测量仪对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的薄膜折射率和厚度进行了测试.结合ICP法测得的薄膜中的Mg组成量,经数值拟合,导出表征薄膜厚度与薄膜生长条件、薄膜折射率与薄膜中的Mg组成量之间关系的曲线,为MBE法在Sapphire衬底上生长Zn1-xMgxO薄膜时控制薄膜厚度以及在制作Zn1-xMgxO薄膜的波导时控制薄膜的折射率提供了理论依据.
The refractive index and thickness of Zn1-xMgxO thin films grown on the Sapphire substrate by molecular beam epitaxy (MBE) were measured by polarization ellipsometer.The composition of Mg in the films measured by ICP method was determined by Numerical simulations were performed to derive the curves that characterize the relationship between the film thickness and film growth conditions, the refractive index of the film and the amount of Mg in the film. The MBE method was used to control the film thickness when Zn1-xMgxO films were grown on a Sapphire substrate. -xMgxO film waveguide wave guide to control the refractive index of the film provides a theoretical basis.