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在4H型碳化硅导电衬底上进行N型外延层生长,并对外延层表面进行化学机械抛光;通过高温氧化的方法在表面生成氧化层,并且在NO中进行退火;在此之后,加工碳化硅MOS电容和LMOS;通过C-V测试的方法对Si O2/Si C界面特性进行评估;通过测试的方法对LMOS的场效应迁移率和MOS的击穿电压分布情况进行分析。结果表明,经过表面抛光可大大改善表面形貌,在一定程度上抑制界面态的产生,并且改善沟道导电的一致性。
N-type epitaxial layer growth is performed on the 4H silicon carbide conductive substrate, and the surface of the epitaxial layer is subjected to chemical mechanical polishing; an oxide layer is formed on the surface by high-temperature oxidation and annealed in NO; after that, Si MOS capacitor and LMOS. The Si O2 / Si C interfacial properties were evaluated by CV test. The field-effect mobility and MOS breakdown voltage distribution of LMOS were analyzed by the test method. The results show that surface polishing can greatly improve the surface morphology, to some extent, inhibit the generation of interface states, and improve the channel conductivity consistency.