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对热载流子导致的 SIMOX衬底上的部分耗尽 SOI NMOSFET’s的栅氧化层击穿进行了系统研究 .对三种典型的热载流子应力条件造成的器件退化进行实验 .根据实验结果 ,研究了沟道热载流子对于 SOI NMOSFET’s前沟特性的影响 .提出了预见器件寿命的幂函数关系 ,该关系式可以进行外推 .实验结果表明 ,NMOSFET’s的退化是由热空穴从漏端注入氧化层 ,且在靠近漏端被俘获造成的 ,尽管电子的俘获可以加速 NMOSFET’s的击穿 .一个 Si原子附近的两个 Si— O键同时断裂 ,导致栅氧化层的破坏性击穿 .提出了沟道热载流子导致氧化层击穿的新物理机制
The gate oxide breakdown of the partially depleted SOI NMOSFET’s on SIMOX substrate caused by hot carriers was investigated systematically.The device degradation caused by three typical hot carrier stress conditions was tested.According to the experimental results, The influence of channel hot carriers on the characteristics of SOI NMOSFET’s front trench is studied, and the exponential function relationship of the predicted device lifetime is proposed, which can be extrapolated.The experimental results show that the degradation of NMOSFET’s is caused by the thermal holes’ The oxide layer is implanted and is trapped near the drain terminal, although electron trapping can accelerate the breakdown of the NMOSFET’s. Two Si-O bonds near one Si atom break simultaneously, resulting in a destructive breakdown of the gate oxide. A new physical mechanism of channel hot carrier breakdown in the oxide layer