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负阻发光二极管是一种p-n-p-n四层结构的半导体发光器件。它具有负阻特性,故其有开关特性。硅四层结构器件接成三端形式就是可控硅器件。如果发光二极管所用的晶体做成两端p-n-p-n器件,就可获得负阻特性并在通态发光。负阻发光二极管是n型衬底,其内部有三个极性的p-n结,当两个p-n结处于正向偏置时出现负阻特性,
Negative-resistance light-emitting diode is a p-n-p-n semiconductor structure of the semiconductor light-emitting devices. It has negative resistance characteristics, so it has the switching characteristics. Silicon four-layer structure of the device connected to the three-terminal form is the SCR device. If the LED used in the crystal made of both ends of the p-n-p-n device, you can get the negative resistance characteristics and light in the off state. Negative-resistance LEDs are n-type substrates with three polar p-n junctions inside and negative resistance characteristics when the two p-n junctions are forward biased,