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我们用光电流谱方法在室温和低温下观察了短周期GaAs(35A)/Ga_(0.7)Al_(0.3)A_3(35A)超晶格的Wannier-Stark效应.在中等电场下,观测到了反映等能量间距的“Stark梯”的谱形.并且发观了激子态由于场致局域化导致的由准三维向准二维转变.我们详细地讨论了跃迁强度随电场的变化,与应用夏建白等提出的计算模型得出的结果十分符合,证明了光电流谱中的结构,即使在较低的 10~4V/cm的电场下是由于 Wannier局域化引起,而不可能是鞍点激子引起的.
We observed the Wannier-Stark effect of short-period GaAs (35A) / Ga_ (0.7) Al_ (0.3) A_3 (35A) superlattices at room temperature and low temperature by photocurrent spectroscopy. Energy spacing of the “Stark ladder” spectral shape and the development of the exciton state due to field localization caused by the quasi-three-dimensional quasi-two-dimensional transition.We discussed in detail the transition intensity with the change of electric field, and the application of Xia Jianbai And other computational models are in good agreement with each other, proving that the structure in the photocurrent spectrum is caused by the Wannier localization but not the saddle point exciton even in the low electric field of 10 to 4 V / cm of.