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用反射率对比度来衡量晶化程度,分别探讨了脉宽为500ns,100ns,60ns的蓝绿激光(514nm)作用下沉积态Ag11In12Sb51Te26相变薄膜的晶化性能,表明Ag11In12Sb51Te26相变薄膜在蓝绿激光下可具有较高的晶化速度。对比分析了热致晶化后的Ag11In12Sb51Te26薄膜在514nm处的反射率对比度,结果表明激光晶化和热致晶化后薄膜的反射率对比度有明显差别,分别为8%和192%。
The crystallinity of Ag11In12Sb51Te26 as-deposited films was investigated by contrast of reflectance, and the crystallization behavior of Ag11In12Sb51Te26 phase-change films under the action of blue-green laser (514nm) with pulse width of 500ns, 100ns and 60ns respectively. The results show that the Ag11In12Sb51Te26 phase- Under can have a higher crystallization rate. The contrast of the reflectivity of the thermally crystallized Ag11In12Sb51Te26 thin film at 514nm was compared and analyzed. The results show that the reflectivities of the films after laser crystallization and thermochloriation are significantly different, which are 8% and 192% respectively.