日本松下公司近日开发出新款氮化镓二极管,新产品在额定电压1200V条件下,工作电流是传统碳化硅二极管的4倍,且开启电压较低,运行时电压仍然可维持较低水平。新型二极管采用最新研发的混合结构,由嵌入式低压组件和高电流组件组成,以应用于高电压条件下。传统硅材料二极管的开关损耗较大,另一方面,碳化硅和氮化镓材料在实 Japan’s Matsushita recently developed a new gallium nitride diode, the new product at rated voltage 1200V conditions, the operating current is four times the traditional silicon carbide diodes, and the lower voltage is open, the voltage can still be maintained at lower levels. The new diode uses the newly developed hybrid structure, consisting of embedded low-voltage components and high-current components for use in high-voltage applications. Traditional silicon diode switching loss, on the other hand, silicon carbide and gallium nitride material in the real