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本文描述了采用JS-450D型射频溅射设备,在GaAs衬底上获得了AIN薄膜。对这种膜在H_2、N_2中不同温度下退火实验,分析了热处理对膜绝缘特性、腐蚀特性和光学特性的影响。利用AIN膜来保护光电器件、提高激光器和发光管的功率、降低激光器的阈值电流等作了工艺探讨。实验发现:利用端面镀膜技术,在LED前端面溅上一层AIN(厚为λ/4n,λ为LED发光波长,n是AIN膜的折射率)后,其P-I曲线明显地变化,发光管的功率平均提高了69％(I=100mA)。
This article describes the use of JS-450D type RF sputtering equipment, GaAs substrate obtained AIN film. The films were annealed at different temperatures in H 2 and N 2, and the effects of heat treatment on the insulation, corrosion and optical properties of the films were analyzed. The use of AIN film to protect the optoelectronic devices, improve the power of the laser and the LED, reduce the threshold current of the laser and so on. The experimental results show that the PI curve obviously changes after spattering a layer of AIN (thickness λ / 4n, λ is the wavelength of LED light emission and n is the refractive index of AIN film) The average power increase of 69% (I = 100mA).