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利用气相外延技术在Cd Zn Te衬底上生长Hg1-xCdxTe薄膜材料,通过在不同晶向、不同极性、不同晶向偏离角度Cd Zn Te衬底上的外延结果发现,Cd Zn Te衬底对外延形貌的影响非常大。(111)面衬底上外延形貌明显优于(211)面衬底的外延形貌。对于同是<111>Cd Zn Te晶向的衬底,(111)Cd面Cd Zn Te衬底上的外延形貌明显优于(111)Te面。对于(111)Cd面Cd Zn Te衬底,当晶向偏离角度不同时,其外延形貌也有差异,晶向偏离角越小表面形貌越好。
The growth of Hg1-xCdxTe thin films on Cd Zn Te substrate by vapor phase epitaxy was studied. The epitaxial growth of Cd Zn Te substrates with different crystal orientations, different polarities, The effect of epitaxial topography is very large. The epitaxial morphology of the (111) plane substrate is significantly better than that of the (211) plane. The epitaxial morphology of Cd Zn Te substrate on (111) Cd surface is obviously better than that of (111) Te surface on the same substrate with <111> Cd ZnTe crystal orientation. For Cd (111) Cd-Cd-Zn-Te substrate, the epitaxial morphology is also different when the deviating angles are different. The smaller the deviating angle is, the better the surface morphology is.