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建立了一个直接隧穿电流的经验公式 .将氧化层厚度作为可调参数 ,用这个经验公式可以很好地拟合超薄氧化物 n MOSFET器件的直接隧穿电流 .在拟合中所得到的氧化层厚度比用量子力学电压 -电容方法模拟得到的氧化层厚度小 ,其偏差在 0 .3nm范围内 .
An empirical formula of direct tunneling current is established. Using the oxide thickness as an adjustable parameter, this empirical formula can well fit the direct tunneling current of ultra-thin oxide n MOSFETs. The thickness of the oxide layer is smaller than the thickness of the oxide layer simulated by the quantum-mechanical voltage-capacitance method and the deviation is within the range of 0.3 nm.