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使用超连续谱激光辐照PV型线阵HgCdTe探测器,探测到了线阵器件输出信号随光照强度变化的全过程,发现了被辐照单元过饱和降压、低压稳定输出的反常响应规律;同时,未被辐照单元也存在响应。在总结实验响应规律的基础上,给出了各不同响应阶段功率阈值范围,并分别对辐照单元出现的过饱和降压、低压稳定输出等异常现象及未被辐照单元存在的整体降压反常响应现象进行了深入研究。研究认为采用CDS相关双采样电路使器件的基底信号在强光下存在光响应是造成辐照单元异常响应的主要原因;而器件内部公共P级结构、电路共用Vref电压结构是导致未被辐照单元反常响应输出的主要因素。
The supercontinuum laser was used to irradiate the PV linear array HgCdTe detector to detect the whole process of the output signal of the linear array with the change of illumination intensity. The abnormal response of the irradiated unit with the saturated and the low-voltage output was found. At the same time Non-irradiated cells also respond. On the basis of summarizing the experimental response law, the power threshold range of different response stages is given, and the anomalous phenomena of supersaturation step-down, steady-state output of low voltage and the overall step-down of non-irradiated cells Anomalous response phenomena were studied in depth. The study shows that the CDS-related double sampling circuit makes the device’s base signal photoresponsive under strong light is the main cause of the abnormal response of the irradiation unit; and the internal public P-class structure, the circuit common Vref voltage structure is not irradiated Unit abnormal response output of the main factors.