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在具有长互作用空间和开放式周期结构的 O 型器件中,电子注和场之间相互作用发生在一层直接靠近周期结构的薄层上,其厚度比周期结构小几倍。根据线性奥罗管理论,意味着需要有一个无限大的聚焦磁场,使电子注沿轴向运动。实用器件磁场量是有限的,并且,具有横向运动的电子。这些电子对奥罗管性能可能有显著的影响。横向扰动的电子轨迹由两种因素决定:(1)电子注和高频场横向分量之间相互作用,(2)阳极槽的中断作用。通过高频横向分量的影响、电子注和高频场之间能量交换以及初始电流的分析,为我们能够对这类 O 型超高频器件(如奥罗管、奥罗管—变换器以及谐振返波管等)提供下述的最后结论:
In O-devices with long interaction spaces and open periodic structures, the interaction between the electron injection and the field occurs at a layer directly adjacent to the periodic structure, which is several times smaller in thickness than the periodic structure. According to the linear theory of Oromorphism, it means that an infinitely large focused magnetic field is needed to move the electron beam axially. Practical device magnetic field is limited, and, with lateral movement of electrons. These electrons may have a significant impact on the performance of the tube. The electronic traces of lateral perturbations are determined by two factors: (1) the interaction between the electron injection and the transverse component of the high frequency field, and (2) the disruption of the anode trough. Through the influence of the high-frequency transverse component, the energy exchange between the electronic injection and the high-frequency field and the analysis of the initial current, we are able to analyze the O-type UHF devices such as the Oro-tube, the Oro- Backwave tubes, etc.) provide the following final conclusion: