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采用双沟道结构和GaAs衬底,成功设计研制了双沟道实空间电子转移晶体管.它具有RSTT典型的“Λ”形负阻I-V特性和较宽的平坦谷值区.通过栅压可改变各种负阻参数值,当栅压从0.6V增至1.0V时,PVCR的变化范围是2.1～10.6,峰值电流跨导约为3×10-4S.负阻参数VP,VV和开始产生负阻的栅极阈值电压都小于国际上同类器件的报道值,因此更适合低功耗的运用.
A dual channel real space electron transfer transistor has been successfully designed and fabricated using a double channel structure and a GaAs substrate. It has the typical “Λ” negative resistance IV characteristic of RSTT and a wide flat valley. When the gate voltage is increased from 0.6V to 1.0V, the range of PVCR is 2.1 ~ 10.6, and the peak current transconductance is about 3 × 10-4S. The negative resistance parameters VP, VV and the beginning The gate threshold voltage that produces negative resistance is less than the reported value of similar devices in the world, so it is more suitable for low power consumption.