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本文研究了直拉单晶硅中形成洁净区后过渡族金属杂质铜的沉淀行为.样品经过高低高三步常规热处理形成洁净区后,在不同温度下引入杂质铜,然后对样品分别进行普通热处理和快速热处理,通过腐蚀和光学显微镜研究发现,在700℃引入铜杂质后经过普通热处理和快速热处理都不会破坏洁净区,在900℃和1100℃引入铜杂质后经过普通热处理不会破坏洁净区,而经过快速热处理会破坏洁净区.研究表明,快速热处理可以使硅片体内产生大量的空位,空位的外扩散是破坏洁净区的主要原因.
In this paper, the precipitation behavior of Cu as a transition metal impurity in the Czochralski silicon single crystal after the formation of a clean zone was studied.The sample was subjected to three steps of high and low heat treatment to form a clean zone, then introduced into the copper at different temperatures and then subjected to ordinary heat treatment and Rapid heat treatment by corrosion and optical microscopy found that after the introduction of copper impurities at 700 ℃ after ordinary heat treatment and rapid heat treatment will not damage the clean area at 900 ℃ and 1100 ℃ after the introduction of copper impurities after ordinary heat treatment will not damage the clean area, After rapid thermal treatment will destroy the clean area.Research shows that rapid thermal treatment can produce a large number of vacancies in the silicon wafer body, outside the vacancy diffusion is the main reason for the destruction of clean area.