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利用分子束外延技术研制出了高质量ＩｎＧａＡｓ／ＧａＡｓ应变量子阱材料及量子阱激光器，在室温和１０Ｋ温度下，应变量子阱材料的光荧光峰值半宽分别为３２ｍｅＶ和２．４ｍｅＶ，宽接触激光器的阈值电流密度低达１４０Ａ／ｃｍ￣２。脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为１５ｍＡ和０．８Ｗ／Ａ，线性输出功率大于１２０ｍｗ，基横模输出功率可达１００ｍＷ。ＩｎＧａＡｓ应变量子阱激光器和单模光纤进行了耦合，其组合件出纤光功率典型值为４０ｍＷ，最大值可达６０ｍＷ。显示出了高的基横模输出功率和高的耦合效率。其组合件在４０ｍＷ下，中心发射波长在９７７ｎｍ，成功地研制出适于掺铒光纤放大器用的应变量子阱激光器泵浦源。
High-quality InGaAs / GaAs quantum well materials and quantum well lasers have been developed by using molecular beam epitaxy. The half-widths of the fluorescence peak of the strained quantum well materials are 32 meV and 2.4 meV at room temperature and 10 K, respectively. The wide contact laser The threshold current density is as low as 140 A / cm2. The threshold current and differential quantum efficiency of the rib waveguide narrow-band quantum well laser are 15mA and 0.8W / A, respectively. The linear output power is more than 120mW and the fundamental transverse mode output power is up to 100mW. InGaAs strained quantum well lasers are coupled to single-mode fiber with a typical fiber output power of 40mW and a maximum of 60mW. Shows high base-transverse mode output power and high coupling efficiency. Its assembly at 40mW, the center emission wavelength of 977nm, successfully developed for the erbium-doped fiber amplifier with a strained quantum well laser pump source.