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研究了不同钛掺杂量的再结晶石墨的电阻率与微观结构 ,以探讨掺杂组元对材料导电性能的影响。实验结果表明 ,与相同工艺条件下制得的纯石墨相比 ,掺钛石墨具有高密、高石墨化程度以及极低的电阻率的特点。微观结构分析表明 ,钛对材料的石墨化过程中具有催化作用 ,掺杂石墨材料中钛掺杂量对材料的石墨化程度有很大影响 :少量钛掺杂量即可使材料达到高的石墨化程度 ,过多钛掺杂量不利于其电阻率的的降低。分析表明钛元素在材料中是以碳化钛形式存在 ,但在制备过程中 ,有少量钛逸失 ,从而在材料表面形成孔隙 ,而这些对材料的性能有不利的影响。
The resistivity and microstructure of recrystallized graphite with different amounts of titanium doping were investigated to investigate the influence of doped components on the electrical conductivity of the material. The experimental results show that titanium-doped graphite has the characteristics of high density, high degree of graphitization and very low resistivity as compared with pure graphite obtained under the same process conditions. Microstructure analysis shows that titanium has a catalytic effect on the graphitization process of the material. The amount of titanium doping in the doped graphite material has a great influence on the degree of graphitization of the material: a small amount of titanium doping can make the material achieve high graphite Degree of excessive titanium doping is not conducive to its reduction of resistivity. The analysis shows that titanium is present in the material as titanium carbide. However, during the preparation process, a small amount of titanium is lost to form pores on the surface of the material, which adversely affect the properties of the material.