应用电容电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的ｎ型Ａｌ掺杂ＺｎＳ１－ｘＴｅｘ外延层深中心．Ａｌ掺杂ＺｎＳ０９７７Ｔｅ００２３的光致荧光强度明显低于不掺杂的ＺｎＳ０９７７Ｔｅ００２３，这表明一部分Ａｌ原子形成非辐射深中心．Ａｌ掺杂ＺｎＳ１－ｘＴｅｘ（ｘ＝０，００１７，００４和００４６）的深能级瞬态傅里叶谱表明，Ａｌ引进导带下的０２１和０３９ｅＶ电子陷阱，Ｔｅ除了作为材料合金的成分和等电子中心外，还涉及到一个电子陷阱的形成，其相对于导带的能级位置随Ｔｅ组分增加而减小．实验结果还表明仅有少量掺杂的Ａｌ原子形成非辐射中心，这说明Ａｌ对于Ｔｅ组分范围内（ｘ≤００４６）的ＺｎＳ１－ｘＴｅｘ外延层的确是一种非常好的施主杂质 The deep center of n-type Al-doped ZnS1-xTex epitaxial layer grown by molecular beam epitaxy was studied by capacitance-voltage, photoluminescence and deep level transient spectroscopy. The photoluminescence intensity of Al-doped ZnS0.977Te0023 is obviously lower than that of undoped ZnS0977Te0023, which indicates that some Al atoms form a non-radiative deep center. The deep level transient Fourier spectra of Al-doped ZnS1-xTex (x = 0, 0017, 004 and 0046) show that the introduction of 021 and 039 eV electron traps In addition to Te as a constituent of the material alloy and the isoelectronic center, Te also involves the formation of an electron trap whose energy level position relative to the conduction band decreases as the Te composition increases. The experimental results also show that only a small amount of doped Al atoms form a non-radiative center, indicating that Al is indeed a very good donor impurity for the ZnS1-xTex epitaxial layer in the Te composition range (x≤0.0446)