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得克萨斯仪器公司采用的按比例MOS(SMOS)工艺是一种先进的双层多晶硅技术,几何尺寸小达2.5微米。到目前为止,许多加工步骤的简化使该工艺成为半导体工业中最简单的制造方法之一。制作TMS4416才需要9次掩蔽,其中包括预防划伤的保护性涂层和二步接触加工方法的掩蔽。 其它的存贮器制造厂商或用存贮单元下的注入技术或提高单元面积来谋取足够的信号-噪声比,但是,SMOS工艺却
The scale-up MOS (SMOS) process used by Texas Instruments is an advanced double-layer polysilicon technology with geometries as small as 2.5 microns. So far, the simplification of many processing steps has made the process one of the simplest manufacturing methods in the semiconductor industry. Nine masks are required to produce the TMS4416, which includes masking to prevent scratching of the protective coating and two-step contact processing. Other memory manufacturers either use memory cells under the injection technology or increase the cell area to get enough signal-to-noise ratio, but the SMOS process