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硅双极晶体管是现在公认的最佳微波器件,被广泛用于直到6GHz的各种小信号和功率放大器以及直到18GHz的振荡器。制造技术的较大进步使成本显著降低,同时改善了分立硅晶体管的均匀性,使应用于1GHz以上频率的实用的微波单片集成电路(MMIC)和高速数字集成电路能大批生产。本文提供了市售微波晶体管的设计、一般特性和性能的概述,并且给出能用于微波频率的实际硅单片集成电路状况的最新资料。
Silicon bipolar transistors are now the best microwave devices recognized and are widely used for various small signal and power amplifiers up to 6 GHz and oscillators up to 18 GHz. Significant advances in manufacturing technology have resulted in significant cost reductions while improving the uniformity of discrete silicon transistors enabling mass production of practical MMIC and high speed digital integrated circuits for frequencies above 1 GHz. This article provides an overview of the design, general characteristics, and performance of commercially available microwave transistors and gives an update on the status of actual silicon monolithic integrated circuits that can be used at microwave frequencies.