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在分析辐射环境对MOS和双极型晶体管所构成的逻辑电路的影响时,必须考虑到永久性效应和瞬态效应这两类不同现象的量值和相互关系。本文唯象地评述了这两类效应,并对现有的而且相互竞争着的MOS和双极型器件的集成电路设计给出了详尽的分析,还讨论了近来器件工艺的改进所提供的有利条件。这些改进包括(1)采用氧化铝作为MOS的绝缘栅材料以代替二氧化硅,(2)调整MOS器件的某些“临界结”的几何形状。这些改进,在脉冲的和定态的核辐射条件下“硬化”集成电路的问题中都加以讨论。作者认为,目前所设计的MOS逻辑器件在空间预期到的核辐射条件下,对永久性损伤还有较高的灵敏度,但MOS工艺技术要获得高抗辐射的电路和系统具有很大的潜在力量。
In analyzing the influence of the radiation environment on the logic circuits formed by MOS and bipolar transistors, the magnitude and interdependence of two different phenomena, permanent and transient, must be taken into account. This paper addresses these two effects phenomenally and provides an exhaustive analysis of existing and competing integrated circuit designs for MOS and Bipolar devices. It also discusses the recent advances in device technology that provide advantages condition. These improvements include (1) the use of alumina as the MOS insulated gate material in place of silicon dioxide, (2) the adjustment of some “critical junction” geometries of MOS devices. These improvements are discussed in the issue of “hardened” integrated circuits under both pulsed and steady state nuclear radiation conditions. The author believes that currently designed MOS logic devices have higher sensitivity to permanent damage under the expected nuclear radiation conditions, but MOS technology has great potential to obtain high radiation-resistant circuits and systems .