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材料纯度、生长工艺、退火条件均会影响半导体材料中的杂质或缺陷能级状态,如何精确测量半导体中的能级位置、俘获截面及浓度是进行材料物理研究、制备高性能电子器件的关键步骤。利用深能级瞬态谱(DLTS)技术,采用不同测试条件测量n+p结构硅材料中出现的不同能级位置的深能级,观察到p型外延层中出现的7个深能级。对比不同锁相频率、降升温模式、脉冲宽度、注入脉冲电压对测试结果和精度的影响。结果表明,为了有效地测试同一材料中出现的不同能级位置的深能级,应该尽量采用较高的锁相频率和较大的脉冲宽度,并且在降温模式下进行测试,以便有效地分辨较浅能级的谱峰。该测试方法可以推广到其他多能级半导体材料的表征。
Material purity, growth process, and annealing conditions all affect the state of impurities or defects in semiconductor materials. How to accurately measure the energy level position, capture cross section and concentration in semiconductor materials is the key step for material physics research and preparation of high performance electronic devices . Using deep level transient spectroscopy (DLTS) technique, the deep levels of different energy levels appearing in n + p structure silicon materials were measured under different testing conditions and seven deep levels were observed in the p type epitaxial layer. Compare the different phase-locking frequency, lower temperature mode, pulse width, injection pulse voltage on the test results and accuracy. The results show that in order to effectively test the deep energy levels at different energy levels appearing in the same material, a higher phase-locking frequency and a larger pulse width should be used as much as possible and tested in a cooling mode in order to effectively distinguish between Light level peak. This test method can be extended to the characterization of other multi-level semiconductor materials.